High-Performance Bottom-Contact Organic Thin-Film Transistors Based on Benzo[<i>d</i>,<i>d</i>′]thieno[3,2-<i>b</i>;4,5-<i>b</i>′]dithiophenes (BTDTs) Derivatives

다국어 초록 (Multilingual Abstract)

<P>Three benzo[<I>d</I>,<I>d</I>′]thieno[3,2-<I>b</I>;4,5-<I>b</I>′]dithiophene (<B>BTDT</B>) derivatives, end-functionalized with benzothiophenyl (<B>BT-BTDT</B>; <B>2</B>), benzothieno[3,2-b]thiophenyl (<B>BTT-BTDT</B>; 3), and benzo[<I>d</I>,<I>d</I>′]thieno[3,2-<I>b</I>;4,5-<I>b</I>′]dithiophenyl (<B>BBTDT</B>; <B>4</B>), were prepared for bottom-contact/bottom-gate organic thin-film transistors (OTFTs). An improved one-pot [2 + 1 + 1] synthetic method of <B>BTDT</B> with improved synthetic yield was achieved, which enabled the efficient realization of new <B>BTDT</B>-based semiconductors. All of the <B>BTDT</B> compounds exhibited high performance p-channel characteristics with carrier mobilities as high as 0.34 cm<SUP>2</SUP>/(V s) and a current on/off ratio of 1 × 10<SUP>7</SUP>, as well as enhanced ambient stability. The device characteristics have been correlated with the film morphologies and microstructures of the corresponding compounds.</P><P><B>Graphic Abstract</B>
<IMG SRC='http://pubs.acs.org/appl/literatum/publisher/achs/journals/content/aamick/2012/aamick.2012.4.issue-12/am3022448/production/images/medium/am-2012-022448_0010.gif'></P><P><A href='http://pubs.acs.org/doi/suppl/10.1021/am3022448'>ACS Electronic Supporting Info</A></P>