A study for omega-shaped gate ZnO nanowire FET = Omega 형태의 게이트를 갖는 ZnO 나노선 FET에 대한 연구

다국어 초록 (Multilingual Abstract)

Omega-shaped-gate (OSG) nanowire-based field effect transistors (FETs) have been attracted recently attention due to their highdevice performance expected from theoretical simulations among nanowire-based FETs with other gate geometries. OSG FETs with the channels of ZnO nanowires were successfully fabricated in this study with photolithographic processes. In the OSG FETs fabricated on oxidized Si substrates, the channels of ZnO nanowires with diameters of about 60㎚ are coated surroundingly by Al₂O₃ as gate dielectrics with atomic layer deposition. About 80% of the surfaces of the nanowires coated with Al₂O₃ is covered with gate metal to form OSG FETs. A representative OSG FET fabricated in this study exhibits a mobility of 98.9㎠/Vs, a peak transconductance of 0.4㎲, and an Ion/Ioff ratio of 10？ the value of the Ion/Ioff ratio obtained from this OSG FET is the highest among nanowire-based FETs, to our knowledge. Its mobility, peak transconductance, and Ion/Ioff ratio are remarkably enhanced by 11.5, 32, and 10？ times, respectively, compared with a back-gate FET with the same ZnO nanowire channel as utilized in the OSG FET