도금법으로 형성한 Ni/Cu 전극과 다공성 실리콘 반사방지막을 적용한 태양전지에 관한 연구 = Investigation of solar cells using Ni/Cu contact by plating and porous silicon anti-reflection coating
저자
발행사항
서울 : 세종대학교 대학원, 2008
학위논문사항
학위논문(석사)-- 세종대학교 대학원: 전자공학과 태양전지 전공 2008. 2
발행연도
2008
작성언어
한국어
주제어
DDC
621.31244 판사항(21)
발행국(도시)
서울
형태사항
124 p. : 삽도 ; 26 cm
일반주기명
지도교수:이수홍
소장기관
Solar cell market is increasing continuously. Solar cell is no problems as source of energy, but cost per unit of production is much more expensive because outturn is few than existent main source of energy yet. Development unit cost according to market's growth gets lower continuously and technical development competition acceleration being changed also synergy effect that mayor grows show. With conversion efficiency over 24%, the efficiency of silicon solar cell is approaching theoretical limit of silicon homo-junction. However, the production of crystalline silicon solar cells with such high efficiency is very small compared to silicon solar cells because of complicated fabrication process with cost intensive process steps. In order to commercialize high efficiency solar cells, it is important that the fabrication process should be cost effective without sacrificing the performance.
Screen printing solar cell is simple for metallization and suitable in mass production, most solar cell is produced by these method. Demerit is high series resistance because silver that contact material is not pure but glass frit ingredient. Also, there is demerit that indebtedness and obligation area that contact with actuality silicon substrate is small and because part etching of doping density in contact lower part during contact formation springs up on high emitter part, contact resistance is high.
Evaporated Ti/Pd/Ag contact has been widely used for high efficiency cells. However, the evaporation process is not applicable to mass production because high vacuum is needed. Furthermore, those metals are too expensive to be applied for terrestrial applications. Therefore, need that develop superior contact formation method and material that can be kept performance of solar cell just as it is as value is inexpensive.
Specially, Ni and Cu are applied widely in various electronic goods manufactures as easily formation is available by plating, and solar cell field proves the performance because do wireless and is applied on depression contact of BCSC (Buried contact solar cell) by electroless plating.
Ni/Cu alloy is plated on a silicon substrate by electro-deposition of the alloy from an acetate electrolyte solution, and nickel-silicide formation at the interface between the silicon and the nickel enhances stability and reduces the contact resistance. It was, therefore, found that nickel-silicide was suitable for high-efficiency solar cell applications. The Ni contact was formed on the front grid pattern by electroless plating followed by annealing at 380~400°C for 15~30 min at N2 gas to allow formation of a nickel-silicide in a tube furnace or a rapid thermal processing(RTP) chamber because nickel is transformed to NiSi at 380~400°C. The Ni plating solution is composed of a mixture of NiCl2 as a main nickel source.
Cu was electroplated on the Ni layer by using a light induced plating method. The Cu electroplating solution was made up of a commercially available acid sulfate bath and additives to reduce the stress of the copper layer. The Ni/Cu contact was found to be well suited for high-efficiency so¬lar cells and was successfully formed by using electroless plating and electroplating, which are more cost effective than vacuum evaporation.
Reduction of optical losses in crystalline silicon solar cells by surface modification is one of the most important issues of silicon photovoltaics. Porous Si layers on the front surface of textured Si substrates have been investigated with the aim of improving the optical losses of the solar cells, because an anti-reflection (AR) coating and a surface passivation can be obtained simultaneously in one process. We have demonstrated the feasibility of a very efficient porous Si AR layer, prepared by a simple, cost effective, electrochemical etching method. Silicon p-type CZ (100) oriented wafers were textured by anisotropic etching in sodium carbonate solution. Then, the porous Si layer were formed by electrochemical etching in HF solutions. After that, the properties of porous Si in terms of morphology, structure and reflectance are summarized. The surface morphology of porous Si layers were investigated using SEM. The formation of a porous Si layer about 0.1㎛ thick on the textured silicon wafer result in an effective reflectance coefficient lower than 5% in the wavelength region from 500 to 850nm. Such a surface modification allows improving the Si solar cell characteristics.
In this paper, we report the contact formation process and mechanism of Ni/Cu system, and reduction of optical losses in mono-crystalline silicon solar cells.
서지정보 내보내기(Export)
닫기소장기관 정보
닫기권호소장정보
닫기오류접수
닫기오류 접수 확인
닫기음성서비스 신청
닫기음성서비스 신청 확인
닫기이용약관
닫기학술연구정보서비스 이용약관 (2017년 1월 1일 ~ 현재 적용)
학술연구정보서비스(이하 RISS)는 정보주체의 자유와 권리 보호를 위해 「개인정보 보호법」 및 관계 법령이 정한 바를 준수하여, 적법하게 개인정보를 처리하고 안전하게 관리하고 있습니다. 이에 「개인정보 보호법」 제30조에 따라 정보주체에게 개인정보 처리에 관한 절차 및 기준을 안내하고, 이와 관련한 고충을 신속하고 원활하게 처리할 수 있도록 하기 위하여 다음과 같이 개인정보 처리방침을 수립·공개합니다.
주요 개인정보 처리 표시(라벨링)
목 차
3년
또는 회원탈퇴시까지5년
(「전자상거래 등에서의 소비자보호에 관한3년
(「전자상거래 등에서의 소비자보호에 관한2년
이상(개인정보보호위원회 : 개인정보의 안전성 확보조치 기준)개인정보파일의 명칭 | 운영근거 / 처리목적 | 개인정보파일에 기록되는 개인정보의 항목 | 보유기간 | |
---|---|---|---|---|
학술연구정보서비스 이용자 가입정보 파일 | 한국교육학술정보원법 | 필수 | ID, 비밀번호, 성명, 생년월일, 신분(직업구분), 이메일, 소속분야, 웹진메일 수신동의 여부 | 3년 또는 탈퇴시 |
선택 | 소속기관명, 소속도서관명, 학과/부서명, 학번/직원번호, 휴대전화, 주소 |
구분 | 담당자 | 연락처 |
---|---|---|
KERIS 개인정보 보호책임자 | 정보보호본부 김태우 | - 이메일 : lsy@keris.or.kr - 전화번호 : 053-714-0439 - 팩스번호 : 053-714-0195 |
KERIS 개인정보 보호담당자 | 개인정보보호부 이상엽 | |
RISS 개인정보 보호책임자 | 대학학술본부 장금연 | - 이메일 : giltizen@keris.or.kr - 전화번호 : 053-714-0149 - 팩스번호 : 053-714-0194 |
RISS 개인정보 보호담당자 | 학술진흥부 길원진 |
자동로그아웃 안내
닫기인증오류 안내
닫기귀하께서는 휴면계정 전환 후 1년동안 회원정보 수집 및 이용에 대한
재동의를 하지 않으신 관계로 개인정보가 삭제되었습니다.
(참조 : RISS 이용약관 및 개인정보처리방침)
신규회원으로 가입하여 이용 부탁 드리며, 추가 문의는 고객센터로 연락 바랍니다.
- 기존 아이디 재사용 불가
휴면계정 안내
RISS는 [표준개인정보 보호지침]에 따라 2년을 주기로 개인정보 수집·이용에 관하여 (재)동의를 받고 있으며, (재)동의를 하지 않을 경우, 휴면계정으로 전환됩니다.
(※ 휴면계정은 원문이용 및 복사/대출 서비스를 이용할 수 없습니다.)
휴면계정으로 전환된 후 1년간 회원정보 수집·이용에 대한 재동의를 하지 않을 경우, RISS에서 자동탈퇴 및 개인정보가 삭제처리 됩니다.
고객센터 1599-3122
ARS번호+1번(회원가입 및 정보수정)