FTIR을 이용한 캐스트 폴리 실리콘의 열처리에 관한 연구 = Study on Annealing Characteristics of Cast Poly-Silicon Using FTIR

다국어 초록 (Multilingual Abstract)

We report on annealing experiments of cast poly-Si. Cast poly-Si uses low quality Si as a starting material and a low quality growth method compared to single crystalline Si to reduce the cost to produce material for solar cells. The low quality starting material and the low quality crystal growth method are the source of many defects such as grain boundaries, dislocations and micro defects. There are many interstitial oxygen and substitutional carbon in cast poly-Si and their effect on oxygen precipitation was studied. Cast poly-Si behaves differently from single crystalline Si after thermal treatments due to many defects. Oxygen precipitation characteristics in cast poly-Si wafers are different according to the wafer positions of the ingot. The less stressed wafer does not show oxygen precipitation like Czochralski-grown Si. However, the medium stressed wafer shows heterogeneous oxygen precipitation with low-high two step anneals and the high stressed wafer shows unknown Si, O, C complexes which are very stable at 1250 C. Oxygen and carbon concentrations are measured with Fourior transform infrared spectroscopy measurement.