The effect of SixNy interlayer on the quality of GaN epitaxial layers grown on Si(111) substrates by MOCVD

다국어 초록 (Multilingual Abstract)

In the present paper, the effects of nitridation on the quality of GaN epitaxial films grown on Si(111) substrates by metal–organic
chemical vapor phase deposition (MOCVD) are discussed. A series of GaN layers were grown on Si(111) under various conditions
and characterized by Nomarski microscopy (NM), atomic force microscopy (AFM), high resolution X-ray diffraction (HRXRD),
and room temperature (RT) photoluminescence (PL) measurements. Firstly, we optimized LT-AlN/HT-AlN/Si(111) templates and
graded AlGaN intermediate layers thicknesses. In order to prevent stress relaxation, step-graded AlGaN layers were introduced along
with a crack-free GaN layer of thickness exceeding 2.2 ㎛. Secondly, the effect of in situ substrate nitridation and the insertion of an
SixNy intermediate layer on the GaN crystalline quality was investigated. Our measurements show that the nitridation position greatly
influences the surface morphology and PL and XRD spectra of GaN grown atop the SixNy layer. The X-ray diffraction and PL measurements
results confirmed that the single-crystalline wurtzite GaN was successfully grown in samples A (without SixNy layer) and
B (with SixNy layer on Si(111)). The resulting GaN film surfaces were flat, mirror-like, and crack-free. The full-width-at-half maximum
(FWHM) of the X-ray rocking curve for (0002) diffraction from the GaN epilayer of the sample B in ω-scan was 492 arcsec. The PL
spectrum at room temperature showed that the GaN epilayer had a light emission at a wavelength of 365 nm with a FWHM of 6.6 nm
(33.2 meV). In sample B, the insertion of a SixNy intermediate layer significantly improved the optical and structural properties. In sample
C (with SixNy layer on Al0.11Ga0.89N interlayer). The in situ depositing of the, however, we did not obtain any improvements in the
optical or structural properties.

다국어 초록 (Multilingual Abstract)

In the present paper, the effects of nitridation on the quality of GaN epitaxial films grown on Si(111) substrates by metal–organic
chemical vapor phase deposition (MOCVD) are discussed. A series of GaN layers were grown on Si(111) under various conditions
and characterized by Nomarski microscopy (NM), atomic force microscopy (AFM), high resolution X-ray diffraction (HRXRD),
and room temperature (RT) photoluminescence (PL) measurements. Firstly, we optimized LT-AlN/HT-AlN/Si(111) templates and
graded AlGaN intermediate layers thicknesses. In order to prevent stress relaxation, step-graded AlGaN layers were introduced along
with a crack-free GaN layer of thickness exceeding 2.2 ㎛. Secondly, the effect of in situ substrate nitridation and the insertion of an
SixNy intermediate layer on the GaN crystalline quality was investigated. Our measurements show that the nitridation position greatly
influences the surface morphology and PL and XRD spectra of GaN grown atop the SixNy layer. The X-ray diffraction and PL measurements
results confirmed that the single-crystalline wurtzite GaN was successfully grown in samples A (without SixNy layer) and
B (with SixNy layer on Si(111)). The resulting GaN film surfaces were flat, mirror-like, and crack-free. The full-width-at-half maximum
(FWHM) of the X-ray rocking curve for (0002) diffraction from the GaN epilayer of the sample B in ω-scan was 492 arcsec. The PL
spectrum at room temperature showed that the GaN epilayer had a light emission at a wavelength of 365 nm with a FWHM of 6.6 nm
(33.2 meV). In sample B, the insertion of a SixNy intermediate layer significantly improved the optical and structural properties. In sample
C (with SixNy layer on Al0.11Ga0.89N interlayer). The in situ depositing of the, however, we did not obtain any improvements in the
optical or structural properties.

참고문헌 (Reference)

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