IGZO TFT 제조 공정에 작은 사람 모델을 적용한 반도체 R&D 활용 연구 = A Small Person Model in IGZO TFT Manufacturing Process Research on the Utilization of Semiconductor R&D

국문 초록 (Abstract)

발전하는 디스플레이 시장에서 Thin Film Transistor(TFT)의 성능은 나날이 발전되어 가고 있다. Thin Film Transistor 중에서도 다양한 적용성과 우수한 특성을 갖는 산화물을 이용한 Thin Film Transistor(TFT)의 연구가 많이 진행되고 있다. 산화물 Thin Film Transistor(TFT) 중 RF Sputtering을 이용하여 In-Ga-Zn-O Thin Film Transistor (IGZO TFT)를 제작하고자 한다. 제작하는 과정에서 Power와 기체 유량을 변수로 하여 변수를 최적화하고 제작에 효율성을 찾고자 한다. 이러한 과정에서 Theory of Inventive Problem Solving (TRIZ)의 작은 사람 모델을 이용하여 변수에 따른 영향과 변화를 이해하기 편하도록 표현하고자 한다. 더 나아가 작은 사람 모델을 이용한 연구방법론을 이용하였을 때 반도체 R&D 산업에 긍정적 발전 영향을 줄 수 있음을 기대한다. 따라서, 본 연구의 목적은 작은 사람 모델을 통해 In-Ga-Zn-O Thin Film Transistor (IGZO TFT) 제조 공정을 표현하고 이를 통해 반도체 R&D 산업의 발전에도 기여하는 것이다.

다국어 초록 (Multilingual Abstract)

In the rapidly evolving display market, continuous technological advancements significantly influence the performance of thin-film transistors (TFTs). Research focusing on TFTs using oxide materials has attracted attention due to their diverse applications and excellent properties. Our research explicitly targets the production of indium-gallium-zinc-oxide (IGZO) TFTs using RF sputtering, a critical technology in oxide TFT manufacturing. We aim to optimize the manufacturing process by controlling variables such as power and gas flow to manage electrical characteristics effectively. Central to our approach is the application of the small person model from the Theory of Inventive Problem Solving (TRIZ). This model enables systematic analysis of the effects and changes associated with these variables. We anticipate positive developmental impacts on the semiconductor research and development industry by leveraging this research methodology. Our research aims to enhance the performance and versatility of IGZO TFTs and contribute broadly to semiconductor technology. Through TRIZ-based methodologies, we seek to optimize manufacturing processes and uncover innovative approaches that foster continuous advancement in the display and semiconductor industries. Rigorous experimentation and analysis play a crucial role in improving the efficiency and reliability of TFT technology in our approach. Ultimately, our research aims to optimize TFT manufacturing processes using TRIZ, thereby contributing to the advancement of semiconductor technology. This methodology is pivotal in discovering innovative solutions within the manufacturing process and promoting sustainable technological development. We strive to enhance TFT performance and pave the way for advancements in semiconductor technology across broader applications. Therefore, this study aims to express the In-Ga-Zn-O Thin Film Transistor (IGZO TFT) manufacturing process through a small human model and contribute to the development of the semiconductor R&D industry.