Enhanced dielectric properties of Ag-doped CCTO ceramics for energy storage devices

다국어 초록 (Multilingual Abstract)

<P><B>Abstract</B></P> <P>Ag-doped CaCu<SUB>3</SUB>Ti<SUB>4</SUB>O<SUB>12</SUB> powders were subjected to high-energy milling to produce nano-sized particles, and the resulting ceramics were analyzed in terms of the dielectric properties and sintering temperature. Ag dopant was added to CaCu<SUB>3</SUB>Ti<SUB>4</SUB>O<SUB>12</SUB> powders to reduce the sintering temperature, and the Ag-doped CaCu<SUB>3</SUB>Ti<SUB>4</SUB>O<SUB>12</SUB> ceramics were sintered at temperatures from 975 to 1125°C to determine the optimum sintering temperature according to the various dopant ratios. The relative dielectric permittivity at a frequency of 1kHz of the 2mol% Ag-doped CaCu<SUB>3</SUB>Ti<SUB>4</SUB>O<SUB>12</SUB> ceramics was higher than that of undoped CaCu<SUB>3</SUB>Ti<SUB>4</SUB>O<SUB>12</SUB> ceramics. The addition of Ag to the CaCu<SUB>3</SUB>Ti<SUB>4</SUB>O<SUB>12</SUB> ceramics was observed to lower the sintering temperature from 1125 to 1075°C. Moreover, the 2mol% Ag-doped CaCu<SUB>3</SUB>Ti<SUB>4</SUB>O<SUB>12</SUB> ceramics prepared from nano-size particles exhibited an improved relative dielectric permittivity. These results suggest that Ag-doping and reducing the particle size of the CaCu<SUB>3</SUB>Ti<SUB>4</SUB>O<SUB>12</SUB> ceramics decreases their sintering temperature and improves their dielectric properties.</P>