Study on the Development of Electrode, Semiconductor, and Dielectric Materials for Various Applications
저자
발행사항
용인 : 경희대학교 대학원, 2019
학위논문사항
학위논문(박사)-- 경희대학교 대학원 : 정보전자신소재공학과 2019. 2
발행연도
2019
작성언어
영어
주제어
DDC
621 판사항(20)
발행국(도시)
경기도
형태사항
xv, 146 p. : 삽화, 도표 ; 26 cm
일반주기명
경희대학교 논문은 저작권에 의해 보호받습니다.
지도교수: Hongdoo Kim
각 장마다 참고문헌 수록
UCI식별코드
I804:11006-200000173202
소장기관
The rapid technological growth has led to the discovery of promising materials and their development into innovative applications. Electronics is at the center of this inevitable progress in our society. The scientific community continues to unravel ground-breaking procedures in order to manufacture advanced electronic devices. This study presents non-conventional methodologies for the fabrication of certain electrical components, namely electrodes, semiconductors, and dielectrics, and their applications.
Chapter 1 describes an approach on the fabrication of electrodes at relatively low temperature by the conversion of copper-amino complex into conductive copper films. Previous studies successfully produced conductive thin films from organo-metallic-compounds-based inks. Some inks like those made from copper salt and amines, however, tend to move during thermal annealing and, thus, affect the conductive pattern on the substrate. Herein, conductive inks were synthesized by forming complexes of copper with amines and/or blended amines. To build-up an organo-metallic framework and preserve the pattern throughout the annealing period, diamine was added to the complex in different proportions. The prepared inks were coated on glass substrate and were annealed on a hot plate at 170℃ under the gaseous mixture of formic acid and alcohol for 5 minutes. The metallic film was observed to retain the original pattern of the ink during and after annealing. Adhesion on the substrate was also improved. Inks with blended amines produced films with lower resistivities. The lowest electrical resistivity recorded was 4.99 µΩ∙cm, 3 times that of bulk copper.
Chapter 2 explores the simultaneous thermal treatment and light irradiation of metal nitrates solution to form metal oxide semiconductors. The study employed three different light sources; a medium pressure UV lamp, an excimer lamp, and a flash lamp. The interest in solution-processed metal oxides as semiconductors is increasing because they offer cost-friendly, large scale, and simple methods of fabrication. Among the various mechanisms already reported, photodecomposition offers a method that lowers the processing temperature, a feat that is necessary for flexible electronics application. In this work, flash lamp annealing did not need an external source of thermal energy and was done at room temperature. It was found to be the most effective among the photoconversion methods employed in metal oxide fabrication. Flash lamp annealing provides a platform for an ultra-fast conversion of precursors into oxides. A rapid formation of indium-zinc oxide thin films, within 10s, was achieved. The irradiation was done for such a short time in order to lower the temperature resulted from the local heating caused by flash lamp annealing, which can reach up to >300C at prolonged exposure. TFTs were fabricated using the prepared IZO thin films as active channel. The best performance was observed from the TFT with IZO irradiated for 7.5s having an on/off current ratio of 3.1x108 and calculated mobility of 11.5 cm2/V.s.
Chapter 3 discusses the properties of metal oxide dielectrics prepared by solution process. It adopted the photoconversion principle demonstrated in Chapter 2 using a medium pressure UV lamp. To this date, the industrial practice involves processes in vacuum state that are limited in terms of scale and are not cost friendly. Sol-gel process is a promising technology that has been widely investigated as an alternative. However, procedures and mechanisms on how to lower the processing temperature is still a work in progress. In this study, oxide dielectrics, LaAl2Ox and LaZr2Ox, were formed from spin-coated solutions by means of simultaneous thermal annealing and UV exposure at 150°C. The resulting oxide thin films possessed low leakage current (<10-9 A/cm2 at 1 MV/cm) and high dielectric constants. ZnO-based TFTs were also fabricated using the prepared LaAl2Ox and LaZr2Ox thin films and the measured mobilities were 1.85 cm2/V.s and 1.4 cm2/V.s, respectively.
Lastly, Chapter 4 demonstrates the application of another group of dielectric materials on pressure sensors. The use of electrospun polymeric materials in pressure-sensing devices was established. Polymer-based electronics have been the subject of many research groups from both the academe and the industry because they are considered to be a promising technology for smart and wearable devices. Among them, tactile sensors have attracted great interest for their diverse applications in the field of electronics. Studies have been conducted regarding tactile sensors with the use of piezo materials utilizing their piezocapacitance, piezoresistance, and piezoelectricity. This work made use of the piezocapacitance and piezoelectricity of electrospun TPU and PLA, respectively. Moreover, hybrid sensors were fabricated using both materials in one structure.
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