열증발법에 의해 성장한 SnO2나노/마이크로 결정의 형상에 미치는 Ga의 영향 = Effect of Ga on the Morphology of SnO2 Nano/Micro-Crystals Grown by a Thermal Evaporation Method

다국어 초록 (Multilingual Abstract)

SnO2 nano/micro-crystals with different morphologies were fabricated by the thermal evaporationof SnO2 powders mixed with Ga2O3 powder. The synthesis process was performed at 1300oC in air. X-raydiffraction (XRD) analysis, energy dispersive spectroscopy (EDS), scanning electron microscopy (SEM) andFourier transform infrared spectroscopy (FTIR) were used to examine the morphology, microstructure,elemental composition and chemical property of the as-synthesized products. X-ray diffraction analysisrevealed that the products were SnO2 with a tetragonal rutile crystal structure. From the Fourier transforminfrared spectra of the products, Sn-O stretching mode was observed, which confirmed the formation of SnO2.
Scanning electron microscopic analysis clearly showed that the morphology of the SnO2 crystals wassignificantly affected by the addition of Ga2O3 to SnO2 source powder. SnO2 crystals with a belt-likemorphology were grown when the source powder without Ga2O3 powder was used. Rod-like SnO2 crystals weregrown by using SnO2 powder mixed with Ga2O3 powder as the source powder. When the amount of Ga2O3mixed in the source powder was increased, the morphology of the SnO2 crystals changed from rod to tube.
Energy dispersive X-ray analysis indicated that the inner core of the tube-like crystals was composed of Snrichmetastable phase. No catalytic particles were observed at the tips of the SnO2 nano/micro-crystals,suggesting that the growth process occurred by vapor-solid growth mechanism.

참고문헌 (Reference)

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