<P>The degradation pattern of SnO<SUB>2</SUB> nanowire field effect transistors (FETs) was investigated by using an individual SnO<SUB>2</SUB> nanowire that was passivated in sections by either a PMMA (polymethylmethacrylate) or an Al<SUB>2</SUB>O<SUB>3</SUB> layer. The PMMA passivated section showed the best mobility performance with a significant positive shift in the threshold voltage. The distinctive two-dimensional <I>R</I><SUB>s</SUB>–μ diagram based on a serial resistor connected FET model suggested that this would be a useful tool for evaluating the efficiency for post-treatments that would improve the device performance of a single nanowire transistor. </P>
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