Development and application of two dimensional materials for metal oxide semiconductor field effect transistor
저자
발행사항
Seoul : Sungkyunkwan university, 2018
학위논문사항
Thesis (Ph.D.)-- Sungkyunkwan university : Department of Nano Science and Technology 2018. 2
발행연도
2018
작성언어
영어
주제어
발행국(도시)
서울
형태사항
xii, 117 p. : ill., charts ; 30 cm
일반주기명
Adviser: Sungjoo Lee
Includes bibliographical references
DOI식별코드
소장기관
Development and Application of Two Dimensional Materials for Metal Oxide Semiconductor Field Effect Transistor
Two Dimensional (2D) materials are a class of materials which has layered structure with atomic thickness. Usually, 2D materials are bonded with covalent or ionic bonds in the plane, and with weak Van der Waals force out of the plane. The unique electronic, optical and mechanical properties of 2D materials has made them the most potential candidate in technology applications, among them, the metal oxide semiconductor field effect transistor (MOSFET) application of 2D materials is particularly noticeable due to their outstanding electronic properties and ultrathin nature.
In this thesis, 5 kinds of 2D materials or related device technologies were developed for MOSFET application, including:
(1) Mild dry annealing of graphene to characterize graphene defects;
(2) Water penetration assisted transfer process of CVD MoS2;
(3) Transport properties and band gap opening of Ti2CTx Mxene;
(4) Electrode applications of Ti2CTx Mxene in pentacene OFETs;
(5) Converted HfO2/HfS2 hybrid structure.
In chapter 2, 2 kinds of 2D materials device technologies were developed for MOSFET application, including defects characterization of graphene and transfer of MoS2. Firstly, mild dry annealing method was utilized to characterize graphene defects. In contrast to previously techniques, this method determines the density and degree of dislocation of defects without inducing water-related damage or functionalization. SEM, confocal Raman and AFM, and XPS analysis were performed to demonstrate that this nondestructive method provides rapid and comprehensive determinations of graphene quality.
Secondly, a method with the assistance of water penetration was utilized to transfer CVD MoS2, without etching of the growth substrate or polymer residue on the MoS2. The adhesion forces between the MoS2 and carrier films and the difference between the hydrophobicities of MoS2 and the growth substrate means that water can easily penetrate the interspace at the MoS2/growth substrate interface generated by the peeling off process. This transfer approach protects the original quality of CVD MoS2 without any polymer residue, and also enables the reuse of growth substrate.
In chapter 3, 3 kinds of 2D materials were developed for MOSFET applications, including channel, electrode and dielectric materials. Firstly, the carrier transport behavior of Ti2CTx Mxene was tuned by modifying the surface group with thermal annealing. Carrier transport properties of 2D Ti2CTx Mxene showed mobilities of 104 cm2 V−1 s−1. Modified Ti2CTx Mxene showed a band gap of 80 meV, opening up the possibility of new 2D materials with appropriate band gaps and high mobilities.
Secondly, the electrode applications of Ti2CTx MXene in pentacene OFETs are assessed. KPFM analysis determines the work function of Ti2CTx to be around 5.1 eV. Contact resistance between Ti2CTx and pentacene was extracted to be as low as 3 KΩ cm, superior to other reported electrode materials. Schottky barrier heights between pentacene and Ti2CTx is estimated to be 0.17 eV which is also much lower than that of other electrode materials.
Thirdly, HfO2 was prepared on the top surface of HfS2 through plasma oxidation. HRTEM was used to show that the converted HfO2/HfS2 hybrid structure has an atomically abrupt and defect-free interface. DFT calculations shows the mechanism of unlimited layer-by-layer oxidation. A top-gated FET fabricated with the converted HfO2/HfS2 hybrid structure was found to exhibit a low interface trap density Dit of 6×1011 cm-2 eV-1 and a high on/off current ratio above 107.
The results from this thesis greatly enrich research fields of 2D materials. Especially, these novel 2D materials extend research ideas of 2D materials family. Various technical approaches were introduced in detail, such as mild dry annealing of graphene, water penetration assisted transfer of MoS2, surface group modification of Mxene, and chemical conversion of HfS2. I expect this study provides valuable reference and inspiration for 2D materials research.
Keywords: 2D materials, MOSFET, device technologies, device components
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