딥코팅 방법을 활용한 게이트 산화물 유전체 및 반도체 박막의 제조 및 박막트랜지스터 응용 = Utilizing Dip-Coating to Fabricate Gate Dielectric and Semiconductor for Thin-Film Transistors

다국어 초록 (Multilingual Abstract)

The potential applications of advanced electronic materials in large-area, printable, and flexibleelectronics have generated significant interest. However, creating high-performance, low-voltage thin-filmtransistors (TFTs) for these applications remains difficult due to a lack of advanced gate dielectric andsemiconductor materials that meet both ease-of-fabrication requirements and high electrical performance. Inthis study, we present high-performance gate dielectric thin-films, which were fabricated using a facilesolution-based technique, and then employed to realize low operating voltage organic and metal oxidesemiconductor-based thin-film transistors. The high-k oxide gate dielectrics were produced via a simple dipcoatingmethod, resulting in the formation of thin-oxide layers. These novel oxide gate dielectricsdemonstrated exceptional dielectric properties, with large capacitances (up to 430 nF/ cm2), low-level leakagecurrent densities (< 3 × 10-8A/cm2 at 4 V), featureless morphology (rms roughness < 0.36 nm), and hightransparency (> 85%). Consequently, these dip-coated gate dielectrics can be incorporated into thin-filmtransistors, utilizing pentacene as p-type organic semiconductors. Furthermore, by employing dip-coating,indium oxide and indium-gallium-zinc oxide can be utilized as n-type inorganic semiconductors, allowing forthe fabrication of low-voltage operation and high-performance inorganic TFTs. The resulting TFTs functionedat ultralow voltages (< ± 2 V) and achieved high transistor performance (hole mobility: 0.28 cm2V-1·s-1, electronmobility: ~2.0 cm2V-1·s-1 and on/off current ratio >105).

참고문헌 (Reference)

• 1 H. Sirringhaus, 26 : 1319-, 2014
• 2 G. Horowitz, 12 : 1046-, 2000
• 3 Y. Zang, 6 : 6269-, 2015
• 4 X. Yu, 15 : 383-, 2016
• 5 A. Miyamoto, 12 : 907-, 2017
• 6 H. Klauk, 39 : 2643-, 2010
• 7 H. -W. Zan, 48 : 031501-, 2009
• 8 H. Klauk, 445 : 745-, 2007
• 9 I. N. Hulea, 5 : 982-, 2006
• 10 H. R. Byun, 9 : 7347-, 2017
• 11 H. Ma, 14 : 14110-, 2012
• 12 M. J. Kim, 10 : 37326-, 2018
• 13 S. Park, 32 : 2002217-, 2020
• 14 J. B. Brzoska, 360 : 719-, 1992
• 15 C. J. Brinker, 201 : 97-, 1991
• 16 방금혁 ; 최두호, "반응성 스퍼터링법으로 제조된 Al2O3 막을 이용한 ZnO/Cu/ZnO 투명 히터의 내식성과 투과도 개선 연구" 대한금속·재료학회 59 (59): 155-161, 2021
• 17 김재영 ; 최건오 ; 안태규 ; 정용진, "Photoacid generator가 포함된 광경화성 전구체 기반 자가패턴 가능한 용액 공정형 Zinc Tin 산화물 트랜지스터 연구" 대한금속·재료학회 59 (59): 162-167, 2021
• 18 Yu Byungseok ; Ha Young‐Geun, "Organic–inorganic hybrid gate dielectric using bifunctional polyhedral oligomeric silsesquioxane for low‐voltage organic thin‐film transistors" 대한화학회 42 (42): 1351-1356, 2021
• 19 Song Youngmin ; Ha Young‐Geun, "One‐Step Fabricated and Solution‐Processed Hybrid Gate Dielectrics for Low‐Voltage Organic Thin‐Film Transistors" 대한화학회 42 (42): 983-987, 2021